Nonplanar Device and Strain-Generating Channel Dielectric

ABSTRACT

A nonplanar circuit device having a strain-producing structure disposed under the channel region is provided. In an exemplary embodiment, the integrated circuit device includes a substrate with a first fin structure and a second fin structure disposed on the substrate. An isolation feature trench is defined between the first fin structure and the second fin structure. The circuit device also includes a strain feature disposed on a horizontal surface of the substrate within the isolation feature trench. The strain feature may be configured to produce a strain on a channel region of a transistor formed on the first fin structure. The circuit device also includes a fill dielectric disposed on the strain feature within the isolation feature trench. In some such embodiments, the strain feature is further disposed on a vertical surface of the first fin structure and on a vertical surface of the second fin structure.

BACKGROUND

The semiconductor industry has progressed into nanometer technologyprocess nodes in pursuit of higher device density, higher performance,and lower cost. Despite groundbreaking advances in materials andfabrication, scaling planar device such as the conventional MOSFET hasproven challenging. To overcome these challenges, circuit designers arelooking to novel structures to deliver improved performance. One avenueof inquiry is the development of three-dimensional designs, such as afin-like field effect transistor (FinFET). A FinFET can be thought of asa typical planar device extruded out of a substrate and into the gate. Atypical FinFET is fabricated with a thin “fin” (or fin structure)extending up from a substrate. The channel of the FET is formed in thisvertical fin, and a gate is provided over (e.g., wrapping around) thechannel region of the fin. Wrapping the gate around the fin increasesthe contact area between the channel region and the gate and allows thegate to control the channel from multiple sides. This can be leveragedin a number of way, and in some applications, FinFETs provide reducedshort channel effects, reduced leakage, and higher current flow. Inother words, they may be faster, smaller, and more efficient than planardevices.

However, FinFETs and other nonplanar devices are developingtechnologies, meaning that in many aspects, their full potential has notyet been realized. As merely one example, channel strain (internalizedpressure within a channel region) has been used in planar devices toimprove the flow of charge carriers through the channel region. However,in nonplanar devices, it has proven much more difficult to generatechannel strain, and when channel strain is produced, it has provendifficult to obtain the expected improved carrier mobility. Accordingly,while conventional techniques for forming a strained channel within anonplanar device have been adequate in some respects, they have beenless than satisfactory in others. In order to continue to meetever-increasing design requirements, further advances are needed in thisarea and others.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 is a perspective view of a portion of a workpiece according tovarious aspects of the present disclosure.

FIGS. 2A and 2B are flow diagrams of a method for fabricating fin-baseddevices on a workpiece according to various aspects of the presentdisclosure.

FIGS. 3 and 4 are cross-sectional views of a portion of a workpieceundergoing a method for forming fin-based devices according to variousaspects of the present disclosure.

FIGS. 5A, 6A, 7A, 8A, 9A, 10A, 11A, and 12A are cross-sectional views ofa portion of a workpiece undergoing a method for forming fin-baseddevices showing a channel region of the workpiece according to variousaspects of the present disclosure.

FIGS. 5B, 6B, 7B, 8B, 9B, 10B, 11B, and 12B are cross-sectional views ofa portion of a workpiece undergoing a method for forming fin-baseddevices showing a source/drain region of the workpiece according tovarious aspects of the present disclosure.

FIG. 13 is a perspective view of a portion of a workpiece undergoing amethod for forming fin-based devices according to various aspects of thepresent disclosure.

FIGS. 14A, 15A, 16A, and 17A are cross-sectional views of a portion of aworkpiece undergoing a method for forming fin-based devices showing achannel region of the workpiece according to various aspects of thepresent disclosure.

FIGS. 14B, 15B, 16B, and 17B are cross-sectional views of a portion of aworkpiece undergoing a method for forming fin-based devices showing asource/drain region of the workpiece according to various aspects of thepresent disclosure.

DETAILED DESCRIPTION

The present disclosure relates generally to IC device manufacturing and,more particularly, to a FinFET with a strain-producing feature disposedon the fin within an STI trench and extending down to the substrate.

The following disclosure provides many different embodiments, orexamples, for implementing different features of the disclosure.Specific examples of components and arrangements are described below tosimplify the present disclosure. These are, of course, merely examplesand are not intended to be limiting. For example, the formation of afirst feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. For example, if the device in the figures is turned over,elements described as being “below” or “beneath” other elements orfeatures would then be oriented “above” the other elements or features.Thus, the exemplary term “below” can encompass both an orientation ofabove and below. The apparatus may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein may likewise be interpreted accordingly.

FIG. 1 is a perspective view of a portion of a workpiece 100 accordingto various aspects of the present disclosure. FIG. 1 has been simplifiedfor the sake of clarity and to better illustrate the concepts of thepresent disclosure. Additional features may be incorporated into theworkpiece 100, and some of the features described below may be replacedor eliminated for other embodiments of the workpiece 100.

The workpiece 100 includes a substrate 102 or wafer with one or more finstructures 104 formed upon it. The fin structures 104 are representativeof any raised feature, and while the illustrated embodiments includeFinFET fin structures 104, further embodiments include other raisedactive and passive devices formed upon the substrate 102. Theillustrated fin structures 104 include an n-channel (NMOS) FinFET 106and a p-channel (PMOS) FinFET 108. In turn, each of FinFETs 106 and 108comprises a pair of opposing source/drain regions 110, which may includevarious doped semiconductor materials, and a channel region 112 disposedbetween the source/drain regions 110. The flow of carriers (electronsfor the n-channel device and holes for the p-channel device) through thechannel region 112 is controlled by a voltage applied to a gate stack114 adjacent to and overwrapping the channel region 112. The gate stack114 is shown as translucent to better illustrate the underlying channelregion 112. In the illustrated embodiment, the channel region 112 risesabove the plane of the substrate 102 upon which it is formed, andaccordingly, the fin structure 104 may be referred to as a “nonplanar”device. The raised channel region 112 provides a larger surface areaproximate to the gate stack 114 than comparable planar devices. Thisstrengthens the electromagnetic field interactions between the gatestack 114 and the channel region 112, which may reduce leakage and shortchannel effects associated with smaller devices. Thus in manyembodiments, FinFETs 106 and 108, and other nonplanar devices deliverbetter performance in a smaller footprint than their planarcounterparts.

As described in more detail below, in order to electrically isolate thecorresponding FinFETs 106 and 108 from each other, isolation features116 are formed on the substrate 102 between the fin structures 104. Anexemplary isolation feature 116 includes a liner 118 formed on thesubstrate 102 and a fill material 120 formed on the liner 118. Theisolation features 116 may also include strain-producing structures 122disposed within the trench between the fill material 120 and thesubstrate 102. In the illustration of FIG. 1, the fill material 120 isshown partially removed to reveal the underlying liner 118, and theunderlying liner 118 is shown partially removed to reveal thestrain-producing structure 122. As the name implies, thestrain-producing structure 122 creates a strain on the surroundingportions of the fin structure 104 including the portion immediatelyabove the structure 122. Properly configured, the increased strainimproves the flow of carriers through these strained portions. Ingeneral, compressive strain on a channel region 112 improves the carriermobility of PMOS devices, while tensile strain improves the carriermobility of NMOS devices. Accordingly, in some embodiments, thestrain-producing structure 122 is configured to provide tensile strainand is only formed underneath channel regions 112 of NMOS FinFETS 106.

Exemplary methods of forming FinFET devices 106 and 108 andstrain-producing structures 122 will now be described with reference toFIGS. 2A-17B. The figures that follow refer to cross-sections takenthrough the channel region 112 (e.g., along plane 124) and/or throughthe source/drain regions 110 (e.g., along plane 126) of the FinFETdevices 106 and 108. For reference, these cross-sectional planes 124 and126 are shown in FIG. 1.

FIGS. 2A and 2B are flow diagrams of a method 200 for fabricatingfin-based devices on a workpiece 100 according to various aspects of thepresent disclosure. It is understood that additional steps can beprovided before, during, and after the method 200 and that some of thesteps described can be replaced or eliminated for other embodiments ofthe method. FIGS. 3 and 4 are cross-sectional views of a portion of theworkpiece 100 undergoing the method 200, where the cross section istaken through the channel region 112 (along plane 124). Throughout thecorresponding processes of blocks 202 and 204, the source/drain regions110 and the channel regions 112 undergo substantially similar processes.To avoid unnecessary duplication, the substantially similarcross-sectional views showing a cross section taken along thesource/drain regions 110 are omitted. However, for the latter processes,both channel region 112 and source/drain region 110 cross sections areprovided. In that regard, FIGS. 5A, 6A, 7A, 8A, 9A, 10A, 11A, 12A, 14A,15A, 16A, and 17A are cross-sectional views of a portion of theworkpiece 100, where the cross-section is taken through the channelregion 112 (along plane 124), according to various aspect of the presentdisclosure. FIGS. 5B, 6B, 7B, 8B, 9B, 10B, 11B, 12B, 14B, 15B, 16B, and17B are cross-sectional views of a portion of the workpiece 100, wherethe cross section is taken through a source/drain region 110 (alongplane 126), according to various aspects of the present disclosure. FIG.13 is a perspective view of a portion of the workpiece 100 undergoingthe method 200 according to various aspects of the present disclosure.FIGS. 3-17B have been simplified for the sake of clarity and to betterillustrate the concepts of the present disclosure.

Referring first to block 202 of FIG. 2A and to FIG. 3, a workpiece 100is received that includes a substrate 102. The substrate 102 may bedivided into a first region for forming one or more NMOS FinFETs,referred to as an NMOS region 302, and a second region for forming oneor more PMOS FinFETs, referred to as a PMOS region 304. The NMOS region302 may be adjacent to or separate from the PMOS region 304, and avariety of isolation features including trench isolation features 116and/or dummy devices may be formed between the regions. In theembodiments described in detail below, FinFETs are formed in the NMOSregion 302 and PMOS region 304. However, it is understood that theseFinFETs are representative of any raised structure, and furtherembodiments include other raised active and passive devices formed uponthe substrate 102.

In some embodiments, the substrate 102 may include two or more layers,with substrate layers 306 and 308 shown. Suitable materials for eitheror both substrate layers 306 and 308 include bulk silicon.Alternatively, the substrate layers 306 and 308 may comprise anelementary (single element) semiconductor, such as silicon or germaniumin a crystalline structure; a compound semiconductor, such as silicongermanium, silicon carbide, gallium arsenic, gallium phosphide, indiumphosphide, indium arsenide, and/or indium antimonide; or combinationsthereof. The substrate 102 may also include a silicon-on-insulator (SOI)structure. Accordingly, either or both of substrate layers 306 and 308may include an insulator such as a semiconductor oxide, a semiconductornitride, a semiconductor oxynitride, a semiconductor carbide, and/orother suitable insulator materials. SOI substrates are fabricated usingseparation by implantation of oxygen (SIMOX), wafer bonding, and/orother suitable methods. In an exemplary embodiment, a first substratelayer 306 includes SiGe, while a second substrate layer 308 includeselementary Si (i.e., doped or undoped Si without Ge or othersemiconductors).

The substrate layers 306 and 308 may have non-uniform compositions. Forexample in FIG. 3, the first substrate layer 306 includes a top portion310 that is different in composition from a bottom portion 312. In theexample, the bottom portion 312 includes SiGe with a Ge concentrationselected between about 10 atomic percent and about 30 atomic percent,while the top portion 310 includes SiGe with a Ge concentration greaterthan that of the bottom portion 312 and selected between about 15 atomicpercent and about 60 atomic percent. The portions may have any relativethickness, and in the example, the top portion 310 has a thickness(indicated by arrow 314) of between about 30 nm and about 100 nm and thebottom portion 312 has a thickness (indicated by arrow 316) of betweenabout 1 μm and about 3 μm. The composition of the substrate layers 306and 308 may be used to tune the strain created by the interface betweenthe layers 306 and 308 as well as to balance other characteristics ofthe associated device. For example, an SiGe semiconductor crystal has alarger intrinsic spacing than an elementary Si semiconductor crystal dueto the presence of germanium atoms. The greater the concentration of Gein the SiGe, the greater the corresponding spacing. Due in part to thisdifferent spacing, an interface between an Si crystalline structure andan SiGe crystalline structure (such as the interface between substratelayers 306 and 308) can be used produce an internal strain in thesubstrate 102 and in the surrounding structures.

As can be seen, the composition of the substrate layers 306 and 308 mayalso differ between the NMOS region 302 and the PMOS region 304. In theprevious example, the first substrate layer 306 has the aforementioneddifferent top portion 310 and bottom portion 312 in the NMOS region 302,while in the PMOS region, the first substrate layer 306 has a uniformcomposition that includes SiGe with a Ge concentration between about 10atomic percent and about 30 atomic percent.

To facilitate fabrication and to avoid damage to the substrate layers,one or more hard mask layers 318 may be formed on the substrate 102. Thehard mask layers 318 may include a dielectric such as a semiconductoroxide, a semiconductor nitride, a semiconductor oxynitride, and/or asemiconductor carbide, and in an exemplary embodiment, the hard masklayers 318 include a silicon oxide layer and a silicon nitride layer.The hard mask layers 318 may be formed by thermal growth, atomic-layerdeposition (ALD), chemical vapor deposition (CVD), high-density plasmaCVD (HDP-CVD), physical vapor deposition (PVD), and/or other suitabledeposition processes.

A photoresist layer 320 may be formed on the hard mask layers 318 andused to define fin structures 104 in a subsequent step of the method200. An exemplary photoresist layer 320 includes a photosensitivematerial that causes the layer to undergo a property change when exposedto light. This property change can be used to selectively remove exposedor unexposed portions of the photoresist layer in a process referred toas lithographic patterning.

Referring to block 204 of FIG. 2A and to FIG. 4, portions of thesubstrate 102 are etched to define the fin structures 104. In someembodiments, this includes a photolithographic technique that patternsthe photoresist layer 320. For example, in one such embodiment, aphotolithographic system exposes the photoresist layer 320 to radiationin a particular pattern determined by a mask. Light passing through orreflecting off the mask strikes the photoresist layer 320 therebytransferring a pattern formed on the mask to the photoresist 320. Inother such embodiments, the photoresist layer 320 is patterned using adirect write or maskless lithographic technique such as laserpatterning, e-beam patterning, and/or ion-beam patterning. Once exposed,the photoresist layer 320 is developed leaving only the exposed portionsof the resist, or in alternate embodiments, leaving only the unexposedportions of the resist. An exemplary patterning process includes softbaking of the photoresist layer 320, mask aligning, exposure,post-exposure baking, developing the photoresist layer 320, rinsing, anddrying (e.g., hard baking).

In the embodiment of FIG. 4, the patterning process leaves only thoseportions of the photoresist layer 320 that are directly above finstructure 104 regions. The remaining portions of the photoresist layer320 are removed to reveal portions of the substrate 102 intended to beetched. Accordingly, after patterning the photoresist 320, one or moreetching processes may be performed on the workpiece 100 to open the hardmask layers 318 and to etch the portions of the substrate 102 and/orsubstrate layers 306 and 308 not covered by the photoresist layer 320.The etching processes may include any suitable etching technique such asdry etching, wet etching, and/or other etching methods (e.g., reactiveion etching (RIE)). In some embodiments, etching includes multipleetching steps with different etching chemistries, each targeting aparticular material of the workpiece 100. For example, in an embodiment,the substrate 102 is etched by a dry etching process using afluorine-based etchant.

The etching is configured to produce fin structures 104 of any suitableheight and width extending above the reminder of the substrate 102. Inthe illustrated embodiment, the process etches completely through thesecond substrate layer 308 and through the top portion 310 of the firstsubstrate layer 306 (in the NMOS region 302) but does not etch throughthe bottom portion 312 of the first substrate layer in the NMOS region302. Of course, these depths are merely exemplary. In addition todefining the fin structures 104, the etching of block 204 may alsodefine one or more isolation feature trenches 402 between the finstructures 104. The trenches 402 may be subsequently filled with adielectric material to form an isolation feature 116, such as a shallowtrench isolation feature (STI). After etching, the remaining photoresistlayer 320 and hard mask layers 318 may be removed.

Referring to block 206 of FIG. 2A and to FIGS. 5A and 5B, a second hardmask 502 is formed over the fin structure 104. The second hard mask 502covers the PMOS region 304 and the source/drain regions 110 of the NMOSregion 302, but exposes the channel region 112 of the NMOS region 302.This allows the subsequent strain-producing structure 122 to be formedunderneath the channel region 112 of the NMOS devices without beingformed elsewhere. The second hard mask 502 may include any suitabledielectric material, and an exemplary second hard mask 502 includes asemiconductor nitride. In order to expose only the NMOS channel region112, the second hard mask 502 may be formed across the fin structures104 of both the NMOS region 302 and the PMOS region 304, and thenselectively etched or otherwise removed from the NMOS channel region112. In one such embodiment, a photoresist layer is deposited on thesecond hard mask 502 after the second hard mask 502 has been depositedover both regions 302 and 304. The photoresist layer is lithographicallypatterned to expose the portion of the second hard mask 502 disposedwithin the NMOS channel region 112 for etching. Then, the second hardmask 502 is removed from the NMOS channel region 112, and the remainingphotoresist may be stripped.

Referring to block 208 of FIG. 2A and to FIGS. 6A and 6B, a dielectricmaterial is formed on a portion of the substrate 102 exposed by thesecond hard mask 502 to produce a strain-producing structure 122. Thedielectric material may include any suitable dielectric, and in someexemplary embodiments includes a semiconductor oxide. Accordingly, inone such embodiment, the exposed portion of the first substrate layer306 within the channel region 112 of the NMOS region 302 is oxidized toform a strain-producing structure 122. Oxidation and otherdielectric-forming techniques may alter the lattice structure and/orspacing of the substrate 102 and can be used to create or relieve strainon the fin structures 104. In particular, for an SiGe-containing firstsubstrate layer 306 and an elementary Si-containing second substratelayer 308, selective oxidation of the first layer 306 imparts a tensilestrain on adjacent areas of the fin structure 104. This may render thefin 104 more suitable for an NMOS FinFET. For this reason and others,the dielectric-forming process may be limited to the channel region 112of the NMOS region 302 by the second hard mask 502. In such embodiments,the strain-producing structure 122 is formed on vertical surfaces of thefirst substrate layer 306 and may also be formed on horizontal surfacesof the first substrate layer 306 between the fin structures 104.

Any suitable oxidation process may be used to oxidize the substrate 102,and in an exemplary embodiment, a wet oxidation process is used becauseit tends to selectively oxidize Ge within the first substrate layer 306without oxidizing Si within the second substrate layer 308. For example,the workpiece 100 may be heated to and maintained at between about 400°C. and about 500° C. while pure water (vapor) is supplied to thesubstrate 102 in an environment maintained at about 1 Atm of pressurefor between about thirty minutes and about one hour. The oxidationtechnique forms a SiGe oxide strain-producing structure 122 within theisolation feature trench in the channel region 112 of the NMOS region302. Elsewhere, the second hard mask 502 prevents oxidation of the firstsubstrate layer 306, such that the strain-producing structure is notformed in the source/drain regions 110 of the NMOS region 302 oranywhere within the PMOS region 304. The strain-producing structure 122may be formed to any suitable thickness, and in various exemplaryembodiments, has a thickness at its thickest point of between about 3 nmand about 10 nm as measured perpendicular to a horizontal or verticalsurface of the substrate 102. After the formation of thestrain-producing structure 122, the second hard mask 502 may be removed.

Referring to block 210 of FIG. 2A and to FIGS. 7A and 7B, a liner 118may be formed on the substrate 102 including on both the fin structures104 and the strain-producing structures 122. The liner 118 reducescrystalline defects at the interface between the substrate 102 and thedielectric fill material and may include any suitable material includinga semiconductor nitride, a semiconductor oxide, a thermal semiconductoroxide, a semiconductor oxynitride, a polymer dielectric, and/or othersuitable materials, and may be formed using any suitable depositionprocess including thermal growth, ALD, CVD, HDP-CVD, PVD, and/or othersuitable deposition processes. In some embodiments, the liner 118includes a conventional thermal oxide liner formed by a thermaloxidation process. In some exemplary embodiments, the liner 118 includesa semiconductor nitride formed via HDP-CVD.

Referring to block 212 of FIG. 2A and to FIGS. 8A and 8B, an STI fillmaterial 120 or fill dielectric is then deposited within the isolationfeature trenches 402 to further define the isolation features 116.Suitable fill materials 120 include semiconductor oxides, semiconductornitrides, semiconductor oxynitrides, FSG, low-K dielectric materials,and/or combinations thereof. In various exemplary embodiments, the fillmaterial 120 is deposited using a HDP-CVD process, a sub-atmospheric CVD(SACVD) process, a high-aspect ratio process (HARP), and/or a spin-onprocess. In one such embodiment, a CVD process is used to deposit aflowable dielectric material that includes both a dielectric fillmaterial 120 and a solvent in a liquid or semiliquid state. A curingprocess is used to drive off the solvent, leaving behind the dielectricfill material 120 in its solid state.

The deposition of the fill material 120 may be followed by a chemicalmechanical polishing/planarization (CMP) process. In the illustratedembodiment, the CMP process completely removes the topmost portion ofthe liner 118 from the fin structure 104, although in furtherembodiments, some portion of the liner 118 remains on top of the finstructure 104 after the CMP process.

Referring to block 214 of FIG. 2A and to FIGS. 9A and 9B, a third hardmask layer 902 is formed over the NMOS region 302 to allow the PMOSregion 304 to be selectively processed. Exemplary third hard mask layer902 materials include a dielectric such as a semiconductor oxide, asemiconductor nitride, a semiconductor oxynitride, and/or asemiconductor carbide, and in an exemplary embodiment, the third hardmask layer 902 include a silicon oxide layer and a silicon nitridelayer. The third hard mask layer 902 may be formed by thermal growth,ALD, chemical vapor deposition (CVD), high-density plasma CVD (HDP-CVD),physical vapor deposition (PVD), and/or other suitable depositionprocesses. In some embodiments, the third hard mask layer 902 isdeposited over both the NMOS region 302 and the PMOS region 304 and thenselectively removed from the PMOS region 304.

Referring to block 216 of FIG. 2A and referring still to FIGS. 9A and9B, the substrate 102 is partially recessed in the PMOS region 304,while the third hard mask layer 902 protects the substrate 102 withinthe NMOS region 302. Any suitable etching technique may be used torecess the second substrate layer 308 in the PMOS region 304 includingdry etching, wet etching, RIE, and/or other etching methods, and in anexemplary embodiment, a dry etching technique utilizingfluorine-containing gas (e.g., CF₂) selectively etches the secondsubstrate layer 308 without etching the surrounding structures. Someamount of the second substrate layer 308 may remain after the etching,and in various examples, the remaining second substrate layer 308 has athickness of between about 5 nm and about 25 nm.

Recessing the substrate 102 in block 216 may also include recessing aportion of the liner 118 in the PMOS region 304. By recessing the liner118, the surface area of the second substrate layer 308 available forepitaxial growth is increased, thereby providing a better bond betweenthe second substrate layer 308 and any subsequently formed layers. Anysuitable etching technique may be used to recess the liner 118 includingdry etching, wet etching, RIE, and/or other etching methods, and in anexemplary embodiment, a wet etching technique utilizing HF selectivelyetches the liner 118 without etching the surrounding structures. Theliner 118 may be recessed further than the second substrate layer 308,and in the illustrated embodiment, the top surface of the liner 118 isbelow the top surface of the second substrate layer 308 after etching.

Referring to block 218 of FIG. 2B and referring to FIGS. 10A and 10B, athird substrate layer 1002 is formed on the second substrate layer 308in the PMOS region 304. As with the first and second substrate layers,the third substrate layer 1002 may comprise an elementary (singleelement) semiconductor, a compound semiconductor, a dielectric, orcombinations thereof. In various exemplary embodiments, the thirdsubstrate layer 1002 includes SiGe with a Ge concentration between about45 atomic percent and about 100 atomic percent. In a further exemplaryembodiment, the third substrate layer 1002 includes doped or undoped Gewithout Si (i.e., an elementary Ge semiconductor). The third substratelayer 1002 may be deposited by any suitable technique includingepitaxial growth, ALD, CVD, and/or PVD, and may be formed to anysuitable thickness. In some exemplary embodiments, the third substratelayer 1002 is formed to a thickness of between about 20 nm and about 40nm.

In embodiments in which the liner 118 is recessed further than thesecond substrate layer 308, the third substrate layer 1002 may bedeposited on three or more surfaces of the second substrate layer 308 (ahorizontal top surface and two vertical side surfaces). This increasedbonding area may reduce the occurrence of voids and other interfacedefects at the interface between the second substrate layer 308 and thethird substrate layer 1002. The deposition of the third substrate layer1002 may be followed by a CMP process to remove material extending abovethe fill dielectric. The third hard mask layer 902 may be removed fromthe NMOS region 302 after the third substrate layer 1002 is deposited,and this may be performed as part of the CMP process or by anothersuitable technique.

Referring to block 220 of FIG. 2B and referring to FIGS. 11A and 11B,the fill material 120 is recessed. Within the NMOS region, the recessingprocess may include recessing a portion of the liner 118 as well. In theillustrated embodiment, the liner 118 in the NMOS region 302 is recessedfurther than the fill material 120 such that the top surface of theliner 118 in the NMOS region 302 is below the top surface of the fillmaterial 120 in the region. The gap between the top surface of the fillmaterial 120 and the top surface of the liner 118 can be controlled bytuning the etching technique, and in various embodiments, ranges betweenabout 3 nm and about 10 nm. Any suitable etching technique may be usedto recess the fill material 120 and/or the liner 118 including dryetching, wet etching, RIE, and/or other etching methods, and in anexemplary embodiment, an anisotropic dry etching is used to selectivelyremove the fill material 120 without etching the substrate layers.

Referring to block 222 of FIG. 2B and to FIGS. 12A and 12B, a dielectriclayer 1202 is formed over the fin structures 104 and the fill material120. The dielectric layer 1202 may serve a number of purposes includingfilling in the gap left by recessing the liner 118 in the NMOS region.The dielectric layer 1202 may also be used as part of a dummy gatestructure. In that regard, in order to protect the channel region 112 ofthe fin structures 104 during the formation of source/drain features1502, a dummy gate may be formed over the channel regions 112 of theNMOS region 302 and/or the PMOS region 304. Accordingly in anembodiment, the portion of the dielectric layer 1202 disposed in thechannel region 112 is a dummy-gate dielectric. The dielectric layer 1202may include any suitable dielectric material, such as a semiconductoroxide, a semiconductor nitride, a semiconductor carbide, a semiconductoroxynitride, other suitable materials, and/or combinations thereof, andin an exemplary embodiment, includes the same dielectric material andcomposition as the fill material 120.

Referring to block 224 of FIG. 2B and to FIG. 13, remaining structuresof the dummy gate 1302 such as a dummy gate layer 1304, a dummy gatehard mask layer 1306, and/or gate spacers 1308 are formed on thedielectric layer 1202. In more detail, forming the dummy gate 1302 mayinclude depositing the dummy gate layer 1304 containing polysilicon orother suitable material and patterning the layer in a lithographicprocess. Thereafter, the dummy gate hard mask layer 1306 may be formedon the dummy gate layer 1304 and may include any suitable material, suchas a semiconductor oxide, a semiconductor nitride, a semiconductorcarbide, a semiconductor oxynitride, other suitable materials, and/orcombinations thereof.

In some embodiments, the gate spacers 1308 or sidewall spacers areformed on each side of the dummy gate 1302 (on the sidewalls of thedummy gate 1302). The gate spacers 1308 may be used to offset thesubsequently formed source/drain features 1502 and may be used fordesigning or modifying the source/drain structure (junction) profile.The gate spacers 1308 may include any suitable dielectric material, suchas a semiconductor oxide, a semiconductor nitride, a semiconductorcarbide, a semiconductor oxynitride, other suitable materials, and/orcombinations thereof.

Referring to block 226 of FIG. 2B and to FIGS. 14A and 14B, thedielectric layer 1202 and one or more of the substrate layers within thesource/drain regions 110 are etched. With respect to the dielectriclayer 1202, the etching technique may leave a portion of the layer 1202extending above the top surface of the substrate layers in order tocontrol and align the epitaxial growth of the source/drain features1502. This can be achieved through the use of an anisotropic etchingtechnique configured to etch horizontal surfaces of the dielectric layer1202 faster than vertical surfaces. With respect to the substratelayers, in the NMOS region 302, the etching leaves a portion of thesecond substrate layer 308 remaining to act as a seed layer for theepitaxial growth process. In the PMOS region 304, the etching may leavea portion of the third substrate layer 1002 remaining to act as a seedlayer for the epitaxial growth process. In another embodiment, theetching may completely remove the third substrate layer 1002 from thesource/drain regions 110 of the PMOS region 304 yet leave a portion ofthe second substrate layer 308 to act as a seed layer. The etching maybe performed as a single etching process or as multiple etchingprocesses using a variety of etchants and techniques, and in variousembodiments, the etching process includes dry etching (such as theaforementioned anisotropic dry etching technique), wet etching, RIEand/or other suitable etching techniques.

Referring to block 228 of FIG. 2B and to FIGS. 15A and 15B, raisedsource/drain features 1502 are formed on the substrate layers (e.g., thesecond substrate layer 308 in the NMOS region 302, the third substratelayer 1002 in the PMOS region 304, etc.). The dummy gate 1302 and/orgate spacers 1308 limit the source/drain features 1502 to thesource/drain regions 110, and the dielectric layer 1202 limits thesource/drain features horizontally within the source/drain regions 110.In many embodiments, the source/drain features 1502 are formed by one ormore epitaxy or epitaxial (epi) processes, whereby Si features, SiGefeatures, and/or other suitable features are grown in a crystallinestate on the fin structure 104. Suitable epitaxy processes include CVDdeposition techniques (e.g., vapor-phase epitaxy (VPE) and/or ultra-highvacuum CVD (UHV-CVD)), molecular beam epitaxy, and/or other suitableprocesses. The epitaxy process may use gaseous and/or liquid precursors,which interact with the composition of the fin structure 104.

The source/drain features 1502 may be in-situ doped during the epitaxyprocess by introducing doping species including: p-type dopants, such asboron or BF₂; n-type dopants, such as phosphorus or arsenic; and/orother suitable dopants including combinations thereof. If thesource/drain features 1502 are not in-situ doped, an implantationprocess (i.e., a junction implant process) is performed to dope thesource/drain features 1502. In an exemplary embodiment, the source/drainfeatures 1502 in the NMOS region 302 include SiP, while those in thePMOS region 304 include GeSnB (tin may be used to tune the latticeconstant) and/or SiGeSnB. One or more annealing processes may beperformed to activate the source/drain features 1502. Suitable annealingprocesses include rapid thermal annealing (RTA) and/or laser annealingprocesses.

Referring to block 230 of FIG. 2B and to FIGS. 16A and 16B, aninter-level dielectric (ILD) 1602 is formed on the source/drain features1502 in the source/drain regions 110. The ILD 1602 may surround thedummy gate 1302 and/or gate spacers 1308 allowing these features to beremoved and a replacement gate 114 to be formed in the resulting cavity.Accordingly, in such embodiments, the dummy gate 1302 is removed afterdepositing the ILD 1602 as shown in FIG. 16A. The ILD 1602 may also bepart of an electrical interconnect structure that electricallyinterconnects the devices of the workpiece including the FinFET devices106 and 108. In such embodiments, the ILD 1602 acts as an insulator thatsupports and isolates the conductive traces. The ILD 1602 may compriseany suitable dielectric material, such as a semiconductor oxide, asemiconductor nitride, a semiconductor oxynitride, a semiconductorcarbide, other suitable materials, and/or combinations thereof.

Referring to block 232 of FIG. 2B and to FIGS. 17A and 17B, a gate stack114 is formed on the workpiece 100 wrapping around the channel regions112 of the fin structures 104. Although it is understood that the gatestack 114 may be any suitable gate structure, in some embodiments, gatestack 114 is a high-k metal gate that includes an interfacial layer1702, a gate dielectric layer 1704, and a metal gate layer 1706 that mayeach comprise a number of sub-layers.

In one such embodiment, the interfacial layer 1702 is deposited by asuitable method, such as ALD, CVD, ozone oxidation, etc. The interfaciallayer 1702 may include an oxide, HfSiO, a nitride, an oxynitride, and/orother suitable material. Next, a high-k gate dielectric layer 1704 isdeposited on the interfacial layer 1702 by a suitable technique, such asALD, CVD, metal-organic CVD (MOCVD), PVD, thermal oxidation,combinations thereof, and/or other suitable techniques. The high-kdielectric layer may include LaO, AlO, ZrO, TiO, Ta₂O₅, Y₂O₃, SrTiO₃(STO), BaTiO₃ (BTO), BaZrO, HfZrO, HfLaO, HfSiO, LaSiO, AlSiO, HfTaO,HfSiO, (Ba,Sr)TiO₃ (BST), Al₂O₃, Si₃N₄, oxynitrides (SiON), or othersuitable materials.

A metal gate layer 1706 is then formed by ALD, PVD, CVD, or othersuitable process, and may include a single layer or multiple layers,such as a metal layer, a liner layer, a wetting layer, and/or anadhesion layer. The metal gate layer 1706 may include Ti, Ag, Al, TiAlN,TaC, TaCN, TaSiN, Mn, Zr, TiN, TaN, Ru, Mo, Al, WN, Cu, W, or anysuitable materials. In some embodiments, different metal gate materialsare used for nMOS and pMOS devices. A CMP process may be performed toproduce a substantially planar top surface of the gate stack 114. Afterthe gate stack 114 is formed, the workpiece 100 may be provided forfurther fabrication, such as contact formation and further fabricationof the interconnect structure.

Thus, the present disclosure provides a technique for enhancing thechannel strain of nonplanar semiconductor devices by forming astrain-producing structure underlying the channel region. In someembodiments, an integrated circuit device is provided. The integratedcircuit includes a substrate and a first fin structure and a second finstructure each disposed on the substrate. The substrate has an isolationfeature trench defined between the first fin structure and the secondfin structure. The integrated circuit device also includes a strainfeature disposed on a horizontal surface of the substrate within theisolation feature trench, and a fill dielectric disposed on the strainfeature within the isolation feature trench. In some such embodiments,the strain feature is further disposed on a vertical surface of thefirst fin structure and on a vertical surface of the second finstructure. In some such embodiments, the strain feature is configured toproduce a strain on a channel region of a transistor formed on the firstfin structure. In some such embodiments, the integrated circuit devicealso includes a third fin structure disposed on the substrate that has ap-channel device disposed thereupon. The third fin structure has a firstlayer disposed on the substrate, a second layer disposed on the firstlayer, and a third layer disposed on at least three surfaces of thesecond layer.

In further embodiments, a semiconductor device is provided that includesa substrate, and a fin extending vertically from the substrate. The finincludes two or more source/drain regions and a channel region disposedbetween the two or more source/drain regions. The semiconductor devicealso includes an isolation feature disposed on the substrate adjacent tothe fin that comprises a liner a liner disposed on a side surface of thefin and on a top surface of the substrate and a fill material disposedon the liner. The fill material has a topmost surface opposite thesubstrate, such that the liner is disposed away from the topmost surfaceof the fill material. In some such embodiments, the semiconductor devicefurther includes a strain feature disposed on the side surface of thefin between a semiconductor material of the fin and the liner. In somesuch embodiments, the fin includes a first semiconductor layer disposedon the substrate, a second semiconductor layer disposed on the firstsemiconductor layer, and a third semiconductor layer disposed on atleast three surfaces of the second semiconductor layer. The secondsemiconductor layer has a different composition than the firstsemiconductor layer and the third semiconductor layer.

In yet further embodiments, a method of forming a semiconductor deviceis provided. The method includes receiving a workpiece having a finstructure formed thereupon, wherein the fin structure includes a firstsemiconductor portion and a second semiconductor portion that isdifferent in composition from the first semiconductor portion. A strainstructure is selectively formed on the first semiconductor portionwithin a channel region of the fin structure. An isolation feature isformed on the strain structure. The second semiconductor portion isrecessed in a pair of source/drain regions adjacent to the channelregion. Source/drain structures are epitaxially grown on the recessedsecond semiconductor portion in the pair of source/drain regions. Insome such embodiments, the selectively forming of the strain structurefurther includes oxidizing the first semiconductor portion within thechannel region of the fin structure to form the strain structure toinclude a semiconductor oxide.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. An integrated circuit device comprising: a substrate; a first finstructure and a second fin structure each disposed on the substrate andhaving an isolation feature trench defined therebetween, wherein each ofthe first fin structure and the second fin structure includes a lowerportion disposed on the substrate and an upper portion disposed on thelower portion, and wherein the lower portion has a differentsemiconductor composition than the upper portion; a strain featuredisposed on a horizontal surface of the substrate within the isolationfeature trench and further disposed on a vertical surface of the lowerportion of each of the first fin structure and the second fin structurewithout being disposed on a vertical surface of the upper portion ofeither of the first fin structure or the second fin structure; and afill dielectric disposed on the strain feature and the upper portion andthe lower portion of each of the first fin structure and the second finstructure within the isolation feature trench.
 2. (canceled)
 3. Theintegrated circuit device of claim 1, wherein the strain feature isconfigured to produce a strain on a channel region of a transistorformed on the first fin structure.
 4. The integrated circuit device ofclaim 1 further comprising a liner disposed between the strain featureand the fill dielectric.
 5. The integrated circuit device of claim 4,wherein the liner is spaced away from a topmost surface of the filldielectric.
 6. The integrated circuit device of claim 4, wherein anisolation feature within the isolation feature trench includes adielectric material between a topmost surface of the isolation featureand a topmost surface of the liner.
 7. The integrated circuit device ofclaim 1 further comprising a third fin structure disposed on thesubstrate and having a p-channel device disposed thereupon, wherein thethird fin structure has a first layer disposed on the substrate, asecond layer disposed on the first layer, and a third layer disposed onat least three surfaces of the second layer.
 8. The integrated circuitdevice of claim 7, wherein the first layer includes SiGe, wherein thesecond layer includes elementary Si, and wherein the third layerincludes SiGe. 9-20. (canceled)
 21. A semiconductor device comprising: asubstrate having a first region and a second region defined thereupon,wherein the first region and the second region correspond to differenttransistor types; a first fin structure and a second fin structure eachdisposed on the substrate within the first region and having anisolation feature trench defined therebetween, wherein each of the firstfin structure and the second fin structure includes a lower portionextending from the substrate and an upper portion disposed on the lowerportion, and wherein the lower portion has a first semiconductor and theupper portion has a second semiconductor that is different from thefirst semiconductor; a strain feature disposed on a horizontal surfaceof the substrate within the isolation feature trench and furtherdisposed on a vertical surface of the lower portion of the first finstructure, wherein the upper portion of the first fin structure is freefrom the strain feature; and a fill dielectric disposed on the strainfeature within the isolation feature trench.
 22. The semiconductordevice of claim 21, wherein the strain feature is configured to producea strain on a channel region of a transistor formed on the first finstructure.
 23. The semiconductor device of claim 21, further comprisinga liner disposed between the strain feature and the fill dielectric. 24.The semiconductor device of claim 23, wherein the liner is spaced awayfrom a topmost surface of the fill dielectric.
 25. The semiconductordevice of claim 23, further comprising a dielectric material disposed inthe isolation feature trench and over a topmost surface of the liner.26. The semiconductor device of claim 21, further comprising a third finstructure disposed on the substrate within the second region and havinga p-channel device disposed thereupon, wherein the third fin structurehas a first SiGe layer disposed on the substrate, a Si layer disposed onthe first SiGe layer, and a second SiGe layer disposed on at least threesurfaces of the Si layer.
 27. A semiconductor device comprising: asubstrate; a first fin structure and a second fin structure eachdisposed on the substrate and having an isolation feature trench definedtherebetween, wherein each of the first fin structure and the second finstructure have a lower portion having a first composition and an upperportion having a second composition that is different from the firstcomposition; a strain feature disposed on a horizontal surface of thesubstrate within the isolation feature trench and further disposed on avertical surface of the lower portion of the first fin structure withoutbeing disposed on a vertical surface of the upper portion of the firstfin structure; a fill dielectric disposed on the strain feature withinthe isolation feature trench; and a liner disposed between the strainfeature and the fill dielectric.
 28. The semiconductor device of claim27, wherein the strain feature is configured to produce a strain on achannel region of a transistor formed on the first fin structure. 29.The semiconductor device of claim 27, wherein the liner is spaced awayfrom a topmost surface of the fill dielectric.
 30. The semiconductordevice of claim 27, further comprising a third fin structure disposed onthe substrate and having a p-channel device disposed thereupon, whereinthe third fin structure has a first layer disposed on the substrate, asecond layer disposed on the first layer, and a third layer disposed onat least three surfaces of the second layer.
 31. The semiconductordevice of claim 30, wherein the first layer includes SiGe, wherein thesecond layer includes elementary Si, and wherein the third layerincludes SiGe.
 32. The semiconductor device of claim 27, wherein thestrain feature is further disposed on a vertical surface of the secondfin structure and is configured to produce a strain on a channel regionof a transistor formed on the second fin structure.
 33. The integratedcircuit device of claim 1, wherein: the substrate has defined thereupona first region corresponding to a first transistor type and a secondregion corresponding to a second transistor type that is opposite thefirst transistor type; the first fin structure and the second finstructure are disposed within the first region; and the integratedcircuit device further comprises a third fin disposed on the substratewithin the second region that is free of the strain feature.